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| ESM4045DV NPN DARLINGTON POWER MODULE s s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: MOTOR CONTROL s SMPS & UPS s DC/DC & DC/AC CONVERTERS s WELDING EQUIPMENT s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V EBO IC I CM IB I BM P t ot T stg Tj V ISO Parameter Collector-Emitter Voltage (V BE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature Insulation W ithstand Voltage (AC-RMS) o Value 600 450 7 42 63 4 8 150 -55 to 150 150 2500 Uni t V V V A A A A o o o V CEO(sus) Collector-Emitter Voltage (I B = 0) W C C C July 1997 1/8 ESM4045DV THERMAL DATA R t hj-ca se R t hj-ca se R thc -h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heats ink With Conductive Grease Applied Max Max Max 0.83 1.5 0.05 o o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER # I CEV # I EBO # Parameter Collector Cut-off Current (R BE = 5 ) Collector Cut-off Current (V BE = -5) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 mH V c la mp = 450 V I C = 35 A IC IC IC IC = = = = 25 25 35 35 A A A A V CE = 5 V IB IB IB IB = = = = 0.5 A 0.5 A T j = 100 o C 2A 2A Tj = 100 o C Tj = 100 o C 200 450 220 1.15 1.3 1.4 1.5 2.3 2.3 250 4.5 2.5 3.2 0.25 0.75 450 8 4.5 5 0.5 1.5 2 2 3 V V V V V V A/s V V s s s V T j = 100 o C T j = 100 o C Min. Typ . Max. 1.5 20 1 13 1 Un it mA mA mA mA mA V V CEO(SUS) * Collector-Emitter Sustaining Voltage hFE V CE(sat ) DC Current G ain Collector-Emitter Saturation Voltage V BE(s at) di C /dt Base-Emitter Saturation Voltage Rate of Rise of On-state Collector I C = 35 A I C = 35 A IB = 2 A IB = 2 A V CC = 300 V I B1 = 0.75 A V CC = 300 V I B1 = 0.75 A V CC = 300 V I B1 = 0.75 A I C = 25A V BB = -5 V V c la mp = 450 V L = 0.1 mH I CW off = 42 A V BB = -5 V L = 0.06 mH T j = 125 o C I F = 35 A RC = 0 tp = 3 s o T j = 100 C R C = 12 o T j = 100 C R C = 12 o T j = 100 C V CC = 50 V R BB = 0.6 I B1 = 0.5 A o Tj = 100 C I B1 = 2 A V CC = 50 V R BB = 0.6 Tj = 100 C o V CE (3 s) Collector-Emitter Dynamic Voltage VCE (5 s) Collector-Emitter Dynamic Voltage ts tf tc V CEW Storage Time Fall T ime Cross-over T ime Maximum Collector Emitter Voltage Without Snubber Diode Forward Voltage Reverse Recovery Current V F I RM 1.5 20 1.85 24 V A V CC = 200 V IF = 35 A di F /dt = -200 A/s L < 0.05 H o T j = 100 C Pulsed: Pulse duration = 300 s, duty cycle 1.5 % To evaluate the conduction losses of the diode use the following equations: P = 1.5 IF(AV) + 0.001 I2F(RMS) VF = 1.5 + 0.001 IF # See test circuits in databook introduction 2/8 ESM4045DV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/8 ESM4045DV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/8 ESM4045DV Dc Current Gain Typical VF Versus I F Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit Turn-on Switching Waveforms 5/8 ESM4045DV Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode 6/8 ESM4045DV ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G B A O N D E F J C K L M H 7/8 ESM4045DV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 8/8 |
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